ICSCRM 2009 - 13th International Conference on Silicon Carbide and Related Materials

What
When	2009-10-11 00:00 to 2009-10-16 00:00
Where	Nuremberg, Germany
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The aim of the conference is to present and discuss recent progress in crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors involving III-nitrides and diamond. The scope should cover but is not limited to theoretical and experimental investigations.